GNT@ ESSDERC: 3 contributed papers, one Tutorial and a Workshop

The GNT group continues to drive the state of the art in graphene RF devices and circuits in Europe. Three papers with GNT contributions were presented in the week from September 14 to 18 in Graz, Austria at the European Solid-State Device Research Conference (ESSDERC), the premier device conference in Europe. The research in the accepted papers includes original work on electrical contacts to graphene (presented by Amit Gahoi), graphene hot electron transistors and reliability of graphene field effect transistors. All papers from the Proceedings will become available in IEEE Xplore. In addition to these papers, Dr. Fregonese from our partner University of Bordeaux lectured on compact modeling and circuit design with graphene field effect transistors in Monday’s Tutorial on “Novel Transistors – Beyond the Planar Silicon MOSFET”. The tutorial was organized by Prof. Max Lemme. On Friday, Sep 18th, Dr. Vikram Passi lectured on “Graphene and Two-Dimensional (2D) Materials for Nanoelectronics” in the Workshop “New Materials for Nanoelectronics”, organized by the SINANO Institute.