We are happy to report that the Final Report for the NSF US EU Workshop on 2D Layered Materials and Devices that was held in Arlington, VA in April 2015, has been completed and approved by the NSF for public release.
The GNT group continues to drive the state of the art in graphene RF devices and circuits in Europe. Three papers with GNT contributions were presented in the week from September 14 to 18 in Graz, Austria at the European Solid-State Device Research Conference (ESSDERC), the premier device conference in Europe. The research in the accepted papers includes original work on electrical contacts to graphene (presented by Amit Gahoi), graphene hot electron transistors and reliability of graphene field effect transistors.
A comprehensive review paper on the state of the art in graphene-based hot electron transistors has been published in the journal Solid State Communications. Part of a topical issue, this invited work summarizes the joint efforts of the GRADE consortium and the ERC project InteGraDe on this innovative electronic device concept, which we termed “Graphene Base Transistor”, or GBT. The paper summarizes experimental data and theoretical predictions of the GBTs potential for high frequency analog applications. The paper is dedicated to the memory of Prof. Wolfgang Mehr, the inventor of the GBT.
50 yeas ago, Gordon Moore predicted exponential progress in microelectronics. This predication soon became "Moore's Law", which drove the entire semiconductor industry with myriads of engineers and physicists towards incredible progress over the five decades since. Essentially, it is the realization of Moore's prediction that made possible the Information Society that we live in now. Today, we continue in research and innovation in Moore's footsteps, even tough the path to progress has arguably become more complicated. But it's sure still a lot of fun!